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specification item white side view led m o d e l s w b k 0 5 cust o m e r customer appr ov ed by appr ov ed by appr ov ed by / / / supplier dr awn by check e d by appr ov ed by / / / seoul se miconductor co. , ltd.
rev. 1.00 s w b k 0 5 contents 1. f e atures 2. application 3. absolute maximum r a tings 4. electr o -optical char acteristics 5. cie chromaticit y diagr a m 6. char acteristic diagr a m 7. r e liabilit y 8. pr ecautions 9. soldering p r of ile 10. outli n e di mension 11. p a cking 12. r eel p a cking structure 13. history 02 02 03 03 04 05 08 09 10 11 12 13 14 seoul semiconduc tor co., ltd. 1 ssc-qp - 7 - 03 -44( ? )
rev. 1.00 s w b k 0 5 1. featu r es p a ckage: s m t solder abilit y dimension: 2 . 8 1.2 0.8 ( mm ) low th ermal r e sist ance r o hs compliant, l e ad fr ee s u i t a b l e f o r s m a l l a p p l i c a t i o n s own p a ten t r e ser v ed sw bk05 is v e ry usef ul side view led i n back light unit application flat backlighti n g (l cd , disp lay) mobile phon e , camer a , pd a, noteb ook coupling into light guide p a nel av s y s t e m s 2 ssc-qp - 7 - 03 -44( e )
rev. 1.00 s w b k 0 5 3. absolute maximu m ratings ( t a = 25 c ) p a r a m e t e r s y m b o l v a l u e u n i t p o wer di ssipa tion p d *1 120 mw f o rw ar d curr ent i f 30 ma p e ak f o r w ar d curr ent i fm *2 100 ma r e v e rse v o ltage v r 5 v oper ating t e mper atur e t opr -30 ~ +85 c stor ag e t e mp er atur e t stg -40 ~ +100 c * 1 care is to b e tak e n t h at p o w e r dis s ip at io n d o e s no t exceed the a b sol u te maxim u m rating of t h e p r od uc t. *2 i fm cond it io ns : pu lse w i d t h t w 0.1ms , dut y r a t i o 1/10 4. electro-optical characterist ics ( t a = 25 c ) i t e m s y m b o l c o n d i t i o n m i n t y p m a x u n i t r a nk y 2. 7 - 3.0 r a n k z 3 . 0 - 3 . 3 fo r w a r d v o l t a g e ra n k a v f i f = 20 ma 3 . 3 - 3. 7 v r e v e rse curr ent i r v r = 5 v - - 5 0 a r a nk j7 1700 - 1800 r a nk j8 1800 - 1900 r a nk j9 1900 - 2000 r a nk k0 2000 - 2100 r a nk k1 2100 - 2200 luminous i n tensit y *1 r a nk k2 i v i f = 20 ma 2 2 0 0 - 2 3 0 0 mcd viewing angle *2 2 1/2 i f = 20 ma 120 x 0 . 2 6 4 - 0 . 2 9 6 ra n k b y 0 . 2 4 8 - 0 . 2 9 5 x 0 . 2 8 7 - 0 . 3 1 1 ra n k e y 0 . 2 7 6 - 0 . 3 1 5 x 0 . 3 0 7 - 0 . 3 3 0 color coor dinates *3 ra n k f y i f = 20 ma 0 . 2 9 4 - 0 . 3 3 9 - *1 the l u mi nous i n tens i t y i v is m e asured at the p e ak of the spatial patter n which m a y no t be aligned with t h e mechanic al ax is o f th e led pack age . lumi no us in ten s i t y mea s uremen t all o wanc e is 10 %. *2 1/ 2 is the o f f - axi s w h ere the lum i nou s in te ns i t y is 1 / 2 of t h e p e ak in ten s i t y . * 3 measurem e n t u n cer t ai nt y o f the co lor co ord i nate s is 0.01 * not e : al l p r oduct s c o nf i r m t o the li st ed mi ni mum and maxi m u m sp ec if ica t io ns f o r e l ec tri c and op ti cal c h ar acter i s t i c s, w h en oper ated a t 20ma wi t h in the maxi mum r a t i ngs shown abov e. seoul semiconduc tor co., ltd. 3 ssc-qp - 7 - 03 -44( e ) all mea s uremen ts wer e made und er the standa r d ized en vironmen t of se ou l semico n d uctor .
rev. 1.00 s w b k 0 5 5. cie chromaticity diagram 0. 0 0 . 1 0. 2 0 . 3 0 . 4 0 . 5 0. 6 0 . 7 0. 8 0. 0 0. 1 0. 2 0. 3 0. 4 0. 5 0. 6 0. 7 0. 8 0. 9 460 470 475 480 485 490 495 500 505 510 515 520 525 530 535 540 545 550 555 560 565 570 575 58 0 585 590 595 600 610 620 630 830 y co ord . x c o o r d . 0. 24 0. 26 0 . 2 8 0 . 3 0 0. 3 2 0. 34 0. 36 0. 22 0. 24 0. 26 0. 28 0. 30 0. 32 0. 34 0. 36 e f b y coord . x c o o r d . lu mi n o us i n tens i t y ranking b y color coordinates ranking by lumino us intensity r a n k m i n m a x u n i t b e f j 7 1 7 0 0 1 8 0 0 j 8 1 8 0 0 1 9 0 0 j 9 1 9 0 0 2 0 0 0 k 0 2 0 0 0 2 1 0 0 k 1 2 1 0 0 2 2 0 0 k 2 2 2 0 0 2 3 0 0 mcd * the check e d r a nks ar e a v a i lable c o l o r r a n k ( i f = 20 ma, t a = 25 c) seoul semiconduc tor co., ltd. 4 ssc-qp - 7 - 03 -44( e ) b e f x y x y x y 0 . 2 6 4 0 . 2 6 7 0 . 2 9 6 0 . 2 7 6 0 . 3 1 1 0 . 2 9 4 0 . 2 8 0 0 . 2 4 8 0 . 3 1 1 0 . 2 9 4 0 . 3 3 0 0 . 3 1 8 0 . 2 9 6 0 . 2 7 6 0 . 3 0 7 0 . 3 1 5 0 . 3 3 0 0 . 3 3 9 0 . 2 8 7 0 . 2 9 5 0 . 2 8 7 0 . 2 9 5 0 . 3 0 7 0 . 3 1 5
rev. 1.00 s w b k 0 5 6. characteristic diagram forw ard current vs. forw ard voltage intensity vs. forward c u rrent 2. 5 2 . 6 2. 7 2 . 8 2. 9 3 . 0 3. 1 3 . 2 3. 3 3 . 4 3. 5 1 10 t a = 25 o c forw ard cu rrent [ ma ] fo r w ar d v o l t age [ v ] 0 5 10 15 20 25 30 3 5 0 40 0 80 0 12 00 16 00 20 00 24 00 28 00 32 00 t a = 25 o c intensit y [ mcd ] fo r w a r d c u rr e n t [ ma ] forw ard current vs. amb i ent temperature radiation diagram - 3 0 - 1 5 0 1 53 0 4 56 0 7 5 9 0 0 5 10 15 20 25 30 forwa r d cu rr en t [ ma ] am bien t t e m p erat u r e [ o c ] - 1 0 0 -8 0 - 6 0 -4 0 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 0. 0 0. 5 1. 0 t a = 25 o c x ax i s y ax i s in ten s i t y theta y x seoul semiconduc tor co., ltd. 5 ssc-qp - 7 - 03 -44( ? )
rev. 1.00 s w b k 0 5 color coordi nat e v s . f o r w a r d c u r r e n t spectrum 0. 294 0. 296 0. 298 0.300 0.302 0. 270 0. 275 0. 280 0. 285 0. 290 t a = 25 o c 1 ma 30 ma y coord. x coord. 400 500 6 0 0 700 800 t a = 25 o c i f = 20 ma in t e nsity [ % ] wavelength [ nm ] forward voltage vs. am bient temp erature color coordinate vs. a m bient tem p erature - 3 0 - 1 5 0 1 5 3 0 4 56 07 59 0 0. 80 0. 85 0. 90 0. 95 1. 00 1. 05 1. 10 1. 15 1. 20 i f = 20 ma v f / v f [25 o c ] am bien t tem p er a t u r e [ o c ] 0. 24 0. 26 0. 2 8 0 . 3 0 0 . 3 2 0. 22 0. 24 0. 26 0. 28 0. 30 25 o c i f = 20 ma y c oord . x c oor d . -3 0 o c 85 o c seoul semiconduc tor co., ltd. 6 ssc-qp - 7 - 03 -44( ? )
rev. 1.00 s w b k 0 5 relati ve luminosity vs. am b i ent t e mper atur e allowab l e for w ar d c u rr ent vs. dut y ratio - 3 0 - 1 5 0 1 5 3 0 4 56 07 5 9 0 0. 6 0. 7 0. 8 0. 9 1. 0 1. 1 1. 2 i v / i v [2 5 o c ] am bi en t t e mp er a t u r e [ o c ] 1 1 0 100 20 40 60 80 100 120 t a = 25 o c a l l o w a bl e forwa r d cu rre n t [ ma ] duty rati o [ % ] seoul semiconduc tor co., ltd. 7 ssc-qp - 7 -03 -44( ? )
rev. 1.00 s w b k 0 5 7. reliability (1) test it ems and resul t s test item test conditions note num b er of damaged reference lif e t e st t a = 25
rev. 1.00 s w b k 0 5 8. precautions (1) stor age con d itions k eep the pr oduct in a dry box or a desi ccator with a desic c ant in or der to pr ev e n t moistur e absorpti on. z z z z z z z z z z z z a. k eep it at a t e mper atur e i n the r a nge f r om 5 q c to 30 q c and at a hu midit y of less than 60 % rh . i n case of being stor ed f o r mor e than 3 month s , th e pr oduct sh ould be sealed with nitr ogen gas. (2) after op enin g th e p a cka g e when solderi n g, this c o uld r e sult in a decr ease of th e photoelectric ef f e ct or light intensit y . a. soldering should be done right after m o unting the pr oduct. b. k eep the tem p er atur e in th e r a nge f r om 5 q c to 40 q c and the humidi t y at less th an 30 % . soldering should be done within 7 days after op ening the desi ccant package. if the pr oduct has been exposed f o r mor e than 7 day s af ter openi n g the package or th e indi cating c o lor of the desi ccator changes, the pr oduct mu st be bak e d at a temper atur e between 60 q c and 65 q c f o r 10 to 12 hours. an unused and unsealed pr oduct sh ould be r e pack ed in a desicc ant pack age and k e pt sealed in a dr y atmo spher e . ( 3 ) pr e c au t i on s f o r u s e an y external mechanic al f o r c e or exc e ssi v e vibr a tion should not be applied to the pr oduct duri ng cooling after soldering, and it is pr ef er able to av oid r a pid cool ing. the pr oduct should not be mounted on a distorted part of pcb . g l o v e s o r w r i s t b a n d s f o r e s d ( e l e c t r i c s t a t i c d i s c h a r g e ) s h o u l d b e w o r e i n o r d e r t o p r e v e n t e s d a n d sur g e damag e , and all dev i ces and equi pmen ts mu st be gr ounded to the earth . (4) miscellaneous r a diation r e si stance is n o t consider ed. when cleanin g the pr oduc t, an y kind of fluid such as w a ter , oil and or ganic solv ent must not be used and ip a(i s opr o pyl alcohol) must be used . when u s ing the pr oduct, oper ating curr ent sh ould be settled in c o nsider ation of the maxim u m ambient temper atur e. its appe ar anc e or spe c if ication f o r impr o v ement i s sub j ect t o chang e without n o ti ce. seoul semiconduc t or co., ltd. 9 ssc-qp - 7 - 03 -44( e )
- 7 - 03 -44( e ) rev. 1.00 s w b k 0 5 9. soldering profile the led c a n be solder ed i n place using the r e flow sol d ering method. (1) lead solder pr eliminary heating to be at maximum 210 c f o r maximum 2 minutes. soldering heat to be at maximum 240 c f o r maximu m 10 second s. (2) lead-f ree solder pr eliminary heating to be at maximum 220 c f o r maximum 2 minutes. soldering heat to be at maximum 260 c f o r maximu m 10 second s. (3) hand soldering conditi o ns not mor e th an 5 second s @max 300 c , under soldering ir on. seoul semiconduc t or co., ltd. 10 ssc-qp 0 1 5 3 0 4 5 6 0 7 5 9 0 1 0 5 1 2 0 1 35 150 165 18 0 1 9 5 0 40 80 12 0 16 0 20 0 24 0 28 0 sold e r ing time s [se c ] devi ce su rf ace t e mperatu r e [ o c] 0 1 5 3 0 4 5 6 0 7 5 9 0 105 120 135 150 1 6 5 1 80 195 0 40 80 120 160 200 240 280 dev i ce su r f ac e t e mp er at u r e [ o c] so ld e r ing time s [se c ]
rev. 1.00 s w b k 0 5 1 0 . o u t l i n e d i m e n s i o n ( t o le r a nce : 0.2 , unit : mm ) seoul semiconduc t or co., ltd. 11 ssc-qp - 7 - 03 -44( ? [bo t t o m vie w ] cat h ode an ode c a thode m ark mol d g a t e
rev. 1.00 s w b k 0 5 1 1 . p a c k i n g ( t o ler a nce : 0.2, uni t : mm ) 8.0 0.05 4.0 0.1 cath ode anod e +0. 1 -0 2.00. 0 5 4.0 0.1 s e ction b- b' (1) quantit y : 3500 pcs / r e el (2) cumulativ e t o ler a nc e : cumulativ e t o ler a nce / 10 pitches to be 0.2 mm (3) adhesion s t r e ngth of cov e r t a pe: adhesi on str e ngth to be 0.1 - 0. 7 n when the cov e r tape i s turned of f f r o m the carrier tape at 10 q angle to be th e carrier tape (4) p a ckage: p/n , manuf acturi ng data code no. and quantit y to be indicated on a damp pr oof p a ckage seoul semiconduc t or co., ltd. 12 ssc-qp - 7 - 03 -44( ? lab e l 180 9 11.4 2 13 0 . 2 22 0 . 2 60 -0 +0 . 2 -3 +0 0.3
rev. 1.00 s w b k 0 5 12. reel packing structure lo t nu m b er : x x x xxxxx materi a l : pape r(sw 3b(b)) ssc p a r t n u m b er : x xxxxx xx seou l acri che 245 (mm) s e miconductor e c ol i g h t ro h s tuv 220 ( m m) ma d e i n k o r e a typ e 7inc h 142 (mm) si ze ( mm) 22 0 24 5 24 5 2 2 0 a b 142 80 c q uan ti ty : x xxx barcode label reel rank : outer box structure xxx humi d i ty i ndic a t or d e sic c an t aluminum v i nyl bag SWBK05 x lot number the lot number is comp osed of the f o llowing char acters; sw bk05 13 ssc-qp - 7 - 03 -44( e ) s y m b o l m e a n i n g e x a m p l e ye a r 8 f o r 2008, 9 f o r 2009 EE month 01 f o r jan. , 0 2 f o r f e b . , EE 12 f o r dec. day 01, 02, 03, 0 4 , 05, EE 2 7 , 28, 29, 30 , 31 number 001, 002, 00 3, 004 , 005, 006, 007 EE
rev. 1.00 s w b k 0 5 13. histor y rev. no. contents date 1.00 - the in stituti o n of new sp ec. 2008. 06.03 published by seoul semiconductor co., ltd. http://www.seoulsem i con.com 148-29, ga san-dong, geumcheon-gu, seoul, 153-801. south korea ? all right reserved. seoul semiconduc t or co., ltd. 14 ssc-qp - 7 - 03 -44( ?

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